The specific construction of laser diodes is key to their principle of operation. At the centre of laser diodes is a p-n junction which is a space between a layer of n-type and another layer of p-type semiconductor material. The presence of this means electrical current can only flow in one direction (meaning it's forward-biased).
Typically these materials are gallium arsenide doped with aluminium, silicon, selenium or indium. The p-type layer has more negatively charged particles while the n-type section is filled with electrons.
At the end of these layers are reflective surfaces, with one being completely reflective and the other partially so.
This means when an electrical current is supplied to the laser diode, the following process occurs:
- Free electrons move from the n-type layer to the p-type layer
- Some of these electrons will combine with the negatively charged particles and stimulates them
- This stimulation causes their energy levels to increase and photons (light energy) to be released
- These photons in turn combine with more electrons, causing greater stimulation and further photons to be produced
- This light energy bounces between the two reflective layers, causing a strong beam of light to be released from the laser diode